Synthesis and Optical Properties Of Aluminium Nickel Sulphide(Al4.5ni7s3) Ternary Thin Films for Optoelectronic Devices

Abstract

Al₄.₅Ni₇ S₃ ternary thin films were deposited on the substrates by using Solution Growth Technique (SGT). The films were grown at temperature of 333K. The sources of Aluminium, Nickel and Sulphur ions are Aluminium Chloride, Nickel Chloride, ethylenediamine tetraacetic acide (EDTA), concentrated ammonia solution and thiourea. The films were annealed at 300˚C for 2 hours. Optical characterization of the films was carried out using UV-VIS-NIR Spectrophotometer in the wavelength range of 300nm-1000nm. The optical transmittance was obtained directly by the Spectrophotometer and the other optical properties were determined by theoretical calculations. The average energy band gaps of the films grown at different concentrations and at a temperature are 3.70, 3.60eV and 3.55eV for different dip times. From the results, it was observed that the direct band gap exhibited by these films decreases with increase in concentrations. The wide direct band gap exhibited by these films make them good materials for solar cell fabrication and optoelectronic device. The high transmittance exhibited by the films reveal that the films are good candidates for the construction of roofs and wall of the poultry houses. This can provide the needed heat required for warming of young chicks. 

Keywords: Synthesis, optical, transmittance, nickel, ternary thin films,